Integrated circuits for power management – these chips regulate voltages and currents (DC-DC converters, voltage regulators, battery management) to power various parts of electronic systems efficiently.
41 articles
There's Rohm licensing TSMC’s GaN process technology, Nvidia building 6G wireless networks, and RS Group buying a specialist distributor of industrial automation and control. The post Most Read – RS buys BPX, Nvidia photonics, AI-RAN in 6G appeared first on Electronics Weekly.
Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — has announced what it claims is the industry’s first commercially available 10kV SiC power MOSFET. The firm says this unlocks architectural freedom, delivering unprecedented system durability, and advancing access to reliable and...
LEHIGH VALLEY, PA, March 2026 – iDEAL Semiconductor announces the expansion of its SuperQ™ 200V MOSFET portfolio, delivering industry-leading on-resistance across the most widely used power semiconductor packages. The iS20M5R5S1T sets a new benchmark as the lowest RDS(on) 200V MOSFET available in the industry-standard TOLL package, while the newly introduced iS20M6R3S1P delivers the lowest RDS(on) for...
Japan-based ROHM has begun online sales of new TRCDRIVE pack, HSDIP20 and DOT-247 silicon carbide (SiC) molded modules, available from distributors including DigiKey and Farnell...
Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices. The post GaN fundamentals: 2DEG, crystal structure, and figure of merit appeared first on EDN.
Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — has appointed Tonya Stevens as chief financial officer (CFO), effective 30 March...
Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — has launched two new packages: top-side-cooled QDPAK and a low-profile TO-247-4L with asymmetrical leads in its 5th-generation GeneSiC technology platform. The latest 1200V SiC MOSFET products are claimed...
South Korea-based SK keyfoundry — which provides specialty analog and mixed-signal foundry services on 8-inch wafers for consumer, communications, computing, automotive and industrial applications — has recently completed the development of its silicon carbide (SiC) planar MOSFET process platform, which it says is gaining traction in the next-generation compound power...
Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — says that its 300mm silicon carbide (SiC) technology platform could serve as a foundational materials enabler for advanced AI and high‑performance computing (HPC) heterogeneous packaging by the end of this decade...
Spain-based multi-national Indra Group is leading the research, development and innovation (RDI) project GIGaNTE (Gallium Nitride and Advanced Packaging Technologies Research Initiative), a strategic initiative to provide Spain with the necessary capabilities to autonomously develop technologies based on gallium nitride (GaN) for advanced defence applications, especially in high-reliability radar and...
BluGlass Ltd of Silverwater, Australia — which develops and manufactures gallium nitride (GaN) blue laser diodes based on its proprietary low-temperature, low-hydrogen remote-plasma chemical vapor deposition (RPCVD) technology — has entered a new AUS$1.25m multi-phased development program, expected to progress over a 14–24-month period, to deliver its gallium nitride (GaN)...
Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — has announced its latest DC–DC power delivery board (PDB) powered by GaNFast technology, enabling direct conversion from 800V to 6V in one power stage. This eliminates the traditional...
At the Japan Society of Applied Physics (JSAP) Spring Meeting 2026 at the Insitute of Science Tokyo (15-18 March), a research group from Nagoya University’s Center for Low-temperature Plasma Sciences, in collaboration with university spinout NU-Rei Co Ltd, is presenting six advances in the growth of gallium oxide (Ga2O3), which...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has introduced the EPC91202 evaluation board, a complete three-phase brushless DC (BLDC) motor drive inverter designed to accelerate the...
The second part on GaN basics explains hybrid structures and RDS(on) penalty while proving further details on HEMTs and substrate choices. The post GaN fundamentals: Hybrid structures, HEMT, and substrate choices appeared first on EDN.
The University of Warwick has secured new funding to boost the UK’s ability to test the reliability of advanced semiconductors used in electric vehicles, renewable energy, and other critical technologies...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has released its Phase 18 Reliability Report, providing new insights into eGaN device reliability. ..
Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — has entered into separate, privately negotiated subscription agreements with investors pursuant to which it will place (i) $379m of its 3.5% convertible 1.5 lien senior secured notes due 2031 and (ii) 3,250,030...
BluGlass Ltd of Silverwater, Australia — which develops and manufactures gallium nitride (GaN) blue laser diodes based on its proprietary low-temperature, low-hydrogen remote-plasma chemical vapor deposition (RPCVD) technology — has partnered with US government relations, corporate advisory and public affairs firm Michael Best Strategies to enhance engagement with key decision...
Eyelit Technologies of Holmdel, N.J, USA (which provides AI-powered optimized planning, scheduling and execution systems) says that its software solution suite has been selected by laser-based silicon carbide (SiC) wafering firm Halo Industries Inc of Santa Clara, CA, USA (a 2014 spin-out from Stanford University) to support its rapidly scaling...
Japan-based ROHM has released, via its website, the reference designs REF68005, REF68006 and REF68004 for three-phase inverter circuits featuring EcoSiC-brand silicon carbide (SiC) molded modules HSDIP20, DOT-247 and TRCDRIVE pack. Designers can use the data provided in the reference designs to create the drive circuit boards. When combined with ROHM's...
POET Technologies Inc of Toronto, Ontario, Canada –– which designs and implementats highly integrated optical engines and light sources for artificial intelligence networks –– has announced a strategic collaboration with optoelectronic and power management firm LITEON Technology of Hsinchu, Taiwan. The partnership aims to co-develop next-generation optical communication modules built...
Munich, Germany – 26 March 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) unveils a high‑current‑density quad‑phase power module with TLVR (trans‑inductor voltage regulator) inductors to meet the power demand of advanced AI data centers. The TDM24745T is a new OptiMOS™ quad‑phase power module designed to meet the...
Toshiba Corp of Kawasaki, Japan has signed a memorandum of understanding (MoU) to start discussions regarding a business integration of the semiconductor business of its subsidiary Toshiba Electronic Devices & Storage Corp (TDSC), the semiconductor business of ROHM Co Ltd, and the power device business of Mitsubishi Electric Corp. The...
In this episode of Chalk Talk, Ryan Jennings from Qorvo and Amelia Dalton explore the critical components and design challenges inherent in LEO satellite infrastructure and how Qorvo’s solutions are enabling the next generation of space-based connectivity. Click here for more information about Qorvo SATCOM 13.75GHz to 14.5GHz GaN Power Amplifiers...
QSiC Dual3 1200-V half-bridge MOSFET modules from SemiQ address the efficiency and thermal demands of liquid-cooled AI data centers. The post SiC modules raise power density for AI servers appeared first on EDN.
Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — has completed its private placements (announced on 19 March) of...
Taiwan Semiconductor Co Ltd (TSC) of New Taipei City, Taiwan — which supplies discrete power electronics devices, LED drivers, analog ICs, transient voltage suppressor (TVS), and electrostatic discharge (ESD) protection — has added to its growing series of automotive-grade 1200V-rated silicon carbide (SiC) Schottky diodes with 1A and 2A models....
A technical exploration of IEEE 802.11bn’s physical and MAC layer enhancements — including distributed resource units, enhanced long range, multi-AP coordination, and seamless roaming — that define Wi-Fi 8.What Attendees will LearnWhy Wi-Fi 8 prioritizes reliability over raw throughput — Understand how IEEE 802.11bn shifts the design philosophy from peak...
Infineon Technologies AG of Munich, Germany and solid-state transformer (SST) solutions firm DG Matrix are partnering to enhance the efficiency of power conversion required to connect AI data centers and industrial power applications to the public grid. As part of the collaboration, DG Matrix will source latest-generation silicon carbide (SiC)...
In booth #1753 at the Applied Power Electronics Conference (APEC 2026) at the Henry B. Gonzalez Convention Center in San Antonio, Texas, USA (22–25 March), Toshiba America Electronic Components Inc – the North American semiconductor and storage business of Tokyo-based semiconductor maker Toshiba Corp – is highlighting its latest power...
Renesas Electronics Corp of Tokyo, Japan has introduced what is claimed to be the industry’s first bidirectional switch using depletion-mode (d-mode) GaN technology, capable of blocking both positive and negative currents in a single device with integrated DC blocking. Targeting single-stage solar micro-inverters, AI data centers and onboard electric vehicle...
In booth #1935 at the IEEE Applied Power Electronics Conference (APEC 2026) in San Antonio, TX, USA (22–26 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications —...
SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has launched the QSiC Dual3, a family of 1200V half-bridge MOSFET modules for motor drives in data-center cooling systems, grid converters in energy...
Renesas Electronics Corp of Tokyo, Japan has expanded its suite of AC/DC and power adapter solutions with a new gallium nitride (GaN)-based half-wave LLC (HWLLC) platform that supports 500W-or-higher operation across IoT, industrial and infrastructure systems...
EPC Space LLC of Andover, MA, USA (which provides high-reliability radiation-hardened enhancement-mode gallium nitride-on-silicon discrete transistors, ICs and modular devices for power management in space and other harsh environments) has announced two new additions to its family of demonstration and evaluation boards supporting applications including half-bridge connected point-of-load (POL) converter...
Geneva, Switzerland, April 1, 2026 — STMicroelectronics has announced two new high-speed half-bridge gate drivers that bring gallium-nitride (GaN) efficiency, thermal performance, and miniaturization to a broad range of power and motion-control applications. The STDRIVEG212 and STDRIVEG612 deliver tightly controlled 5V gate-drive signals to enhanced-mode GaN HEMTs, powered from a high-side voltage up to 220V...
Silvaco Group Inc of Santa Clara, CA, USA — which provides AI-enabled technology computer-aided design (TCAD), electronic design automation (EDA) software and semiconductor intellectual property (SIP) for process and device development — has announced an expanded strategic partnership with Taiwan-based silicon and silicon carbide power device developer and and manufacturer...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has launched a new generation of 100V integrated GaN power-stage ICs (EPC23108, EPC23109, EPC23110 and EPC23111) targeting high-performance motion...
Tighter restrictions on DUV litho; Arm-IBM dual-architecture deal; power device trio; Intel takes full control of Irish fab; 1.4nm AI chip; data center heat islands; 300mm fab equipment spending; 67k IC jobs unfilled; HBF wins over GPU; NIST's photonic chip packaging; USC's new memory; virtual process simulation for automotive. The...
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional TOPSwitch architecture, simplifying high-power designs.